The research in the Electrical and Computer Engineering Department at University of California, Santa Barbara (UC Santa Barbara) leverages and applies the world-class materials expertise, which is prevalent on the campus. This has enabled compound semiconductor and silicon applications to flourish in the areas of high speed, high performance electronics and optoelectronic devices. From the fabrication of the fundamental materials through characterization and the realization of complex devices and integrated circuits, our researchers are driving these fields to new frontiers.
Activities include: investigations of novel device structures and their applications for millimeter-wave and optical integrated circuits and components, including integration of photonic and electronic circuits on silicon. Some typical applications include optical interconnects, millimeter-wave analog systems, solid state lighting, terahertz imaging, and optical communications and photonic networks.

Centers and facilities that comprise the electronics and photonics engineering program at UCSB include:
UCSB Institute for Energy Efficiency (IEE)www.iee.ucsb.edu
The institute is focused on energy efficiency research comprised of six solution groups: Buildings & Design, Lighting, Computing, Electronics and Photonics, Production & Storage and Economics and Policy.
California NanoSystems Institute at UC Santa Barbara (CNSI)
www.cnsi.ucsb.edu
The University of California at Santa Barbara and the University of California at Los Angeles have joined to build the California Nanosystems Institute (CNSI);which will facilitate a multidisciplinary approach to develop the information, biomedical and manufacturing technologies that will dominate science and economy in the 21st century.

UCSB Nanofabrication Facility (Nanotech)
www.nanotech.ucsb.edu
The UCSB Nanofabrication facility is the basis for much of the compound semiconductor research at UCSB. We support a broad line of lithography, thin-film deposition, reactive ion etching, and characterization tools in support of device fabrication for a variety of materials, including InP, GaAs, GaN, SiC, Si, and other novel materials. The facility is available for industry to utilize.